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FMP3217BAx
Document Title
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History Revision No.
0.0 0.1 0.2 0.3 Initial Draft Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Added Operating Temperature descriptions Revised P/N according to the new P/N system Revised ISB1 to 120uA
History
Draft date
Sep.16th, 2005 Nov.10th ,2005 Jun.01st ,2006 Feb. 2nd , 2007
Remark
Preliminary Preliminary
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Revision 0.3 Feb. 2007
FMP3217BAx
FEATURES * Process Technology : Full CMOS
* Organization : 2M x 16 * Power Supply Voltage : 2.7~3.3V * Low Power & Page Modes
FMP3217BA1 : support the PASR/DPD function FMP3217BA2 : support the Direct DPD function FMP3217BA4 : support the PASR/DPD/PAGE function FMP3217BA5 : support the Direct DPD/PAGE function
CMOS LPRAM
* Three state output and TTL Compatible * Package Type : 48-FBGA-6.00x8.00 mm2
FMP3217BAX-FXXX : Normal FMP3217BAx-GxxX : Pb-Free FMP3217BAx-HxxX : Pb-Free & Halogen Free
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
* Separated I/O power(VCCQ) & Core Power(VCC) * Page read/write operation by 16 words
(FMP3217BA4, FMP3217BA5)
* Operating Temperature Ranges:
Special (-10'C to +60'C) Commercial (0'C to +70'C) Extended (-25'C to +85'C) Industrial (-40'C to +85'C)
* DPD mode by using MRS only
(FMP3217BA1, FMP3217BA4)
* Direct DPD mode when /ZZ goes low
(FMP3217BA2, FMP3217BA5)
PRODUCT FAMILY
Operating Voltage (V) Product Family Min. Typ. Max. FMP3217BAx-H60E FMP3217BAx-H70E 60ns 70ns Speed Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 15mA 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ. 80uA Max. 120uA
2.7
3.0
3.3
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER 3. Operating Temperature Range: S (-10'C~60'C), C(0'C~70'C), E(-25'C~85'C), I (-40'C~85'C)
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
A B C D E F G H
/LB
/OE
A0
A1
A2
/ZZ I/O1
Clk gen.
Precharge circuit.
I/O9
/UB
A3
A4
/CS
VCC VSS
I/O10
I/O11
A5
A6
I/O2
I/O3
Row Addresses Row select
Memory array
VSS
I/O12
A17
A7
I/O4
VCC
VCCQ
I/O13
DNU
A16
I/O5
VSS
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O1~I/O8 Data cont I/O Circuit Column select
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
I/O9~I/O16
Data cont
48-FBGA : Top View(Ball Down)
Data cont
Column Addresses
Name /ZZ /CS /OE /WE A0~A20 I/O1~I/O16
Function Low Power Modes Chip Select Input Output Enable Input Write Enable Input Address Inputs Data Inputs/Outputs
Name VCC VCCQ VSS /UB /LB DNU
Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower Byte(I/O 1~8) Do Not Use
/CS /OE /WE Control Logic /UB /LB /ZZ
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FMP3217BAx
PRODUCT LIST
Part Name FMP3217BAx-H60E FMP3217BAx-H70E
1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER 2. Operating Temperature Range: S (-10'C~60'C), C(0'C~70'C), E(-25'C~85'C), I (-40'C~85'C)
CMOS LPRAM
Function 48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) 48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
FUNCTIONAL DESCRIPTION
/CS H X1) H X1) L H H H X1) L L L H L X1) L H L
1. X means don't care.(Must be low or high state) 2. In case of FMP3217BA2 & FMP3217BA5 product 3. In case of FMP3217BA1 & FMP3217BA4 product
/ZZ H L L H H
/OE X1) X1) X1) X1) H
/WE X1) X1) X1) X1) H
/LB X1) X1) X1) H L
/UB X1) X1) X1) H X1) L H L L H L L
I/O1-8 High-Z High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselected Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Direct DPD2) Low Power Modes3) Standby Active Active Active Active Active Active Active Active
H
H L
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Symbol VIN, VOUT Vcc PD TSTG Ratings -0.2 to Vcc+0.3V -0.2 to 3.6 1.0 -65 to 150 Unit V V W 'C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
FMP3217BA Item Supply voltage I/O operating voltage (VCCQ VCC) Ground Input high voltage Input low voltage Symbol Min VCC VCCQ VSS VIH VIL 2.7 2.7 0 0.8VCCQ -0.22) Max 3.3 3.3 0 VCC+0.21) 0.2VCCQ Min 2.7 2.25 0 0.8VCCQ -0.22) Max 3.3 2.75 0 VCC+0.21) 0.2VCCQ Min 2.7 1.65 0 0.8VCCQ -0.22) Max 3.3 1.95 0 VCC+0.21) 0.2VCCQ V V V V V Unit
Note : 1. Overshoot : Vcc+1.0V in case of pulse width20ns. 2. Undershoot : -1.0V in case of pulse width20ns. 3. Overshoot and undershoot are sampled, not 100% tested.
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FMP3217BAx
CAPACITANCE1)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol CIN CIO Test Condition VIN=0V VIO=0V Min Max 8 8 Unit pF pF
(f=1MHz , TA=25'C)
DC AND OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Symbol ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current(CMOS) VOL VOH ISB ISB1 ISB0 ISB0a Low Power Modes ISB0b ISB0c Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH, VIN=VIL or VIH IOL=0.5mA IOH=-0.5mA /CS=VIH, /ZZ=VIH, Other inputs=VIH or VIL /CSVCC-0.2V, /ZZVCC-0.2V, Other inputs=0~VCC /ZZ0.2V, Other inputs=0~VCC, No refresh(DPD) /ZZ0.2V, Other inputs=0~VCC, 1/4 refresh area selection /ZZ0.2V, Other inputs=0~VCC, 1/2 refresh area selection /ZZ0.2V, Other inputs=0~VCC, All refresh area selection 0.8VCCQ 0.3 120 10 90 100 120 20 0.2VCCQ mA V V mA uA uA uA uA uA VIN=VSS to VCC /CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC Cycle time=1us, 100%duty, IIO=0mA, /CS0.2V, /ZZ=VIH, VIN0.2V or VINVCC-0.2V Test Conditions Min -1 -1 Typ Max 1 1 3 Unit uA uA mA
Operating Range
Device FMP3217BAx-XxxS FMP3217BAx-XxxC FMP3217BAx-XxxE FMP3217BAx-XxxI Range Special Commercial Extended Industrial Ambient Temperature -10 to +60 0 to +70 2.7V to 3.3V -25 to +85 -40 to +85 1.65V to Vcc VDD VDDQ
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FMP3217BAx
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level : 0.2 to VCC-0.2V Input rising and falling time : 5ns Input and output reference voltage : 0.5*VCCQ Output load(see right) : CL=30pF+1TTL 30pf
CMOS LPRAM
1TTL
AC CHARACTERISTICS(VCC=2.7V~3.3V)
Speed Bins Parameter List Symbol Min Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output /UB, /LB Access Time Chip Select to Low-Z Output Read /UB, /LB Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High- Z Output /UB, /LB Disable to High- Z Output Output Disable to High- Z Output Output Hold from Address Change Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write /UB, /LB Valid to End of Write Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Page Mode Cycle Time Page Page Mode Address Access Time Maximum Cycle Time /CS High Pulse Width tBLZ tOLZ tHZ tBHZ tOHZ tOH tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW tPC tPAA tMRC tCP 10 5 0 0 0 5 60 50 0 50 50 50 0 0 20 0 5 20 10 5 5 5 20k 5 20 20k 10 5 0 0 0 5 70 60 0 60 60 50 0 0 20 0 5 25 10 5 5 5 20k 5 25 20k ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns tRC tAA tCO tOE tBA tLZ 60 10 60ns Max 20k 60 60 25 60 Min 70 10 70ns Max 20k 70 70 25 70 ns ns ns ns ns ns Units
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
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FMP3217BAx
Power Up Sequence
1. Apply Power 2. Maintain stable power for a minimum of 200us with /CS=VIH
CMOS LPRAM
Standby Mode State machines
Power On
/CS=VIH
Wait 200us
Initial State
/CS=VIH, /ZZ=VIH
/CS=VIL, /ZZ=VIH /UB or/and /LB=VIL /CS=VIH, /ZZ=VIL Active Mode /CS=VIL /ZZ=VIH /CS=VIH (or/and /UB=/LB=VIH) /ZZ=VIH /CS=VIH /ZZ=VIL
/CS=VIL /ZZ=VIH
/CS=VIH, /ZZ=VIL Standby Mode
Low Power Modes 1 (32M/16M/8M bits)
Low Power Modes 2 (Data Invalid)
/CS=VIH, /ZZ=VIL
Standby Mode Characteristics
Mode Standby Memory Cell Data Valid Invalid 1/4 valid Low Power Modes 1/2 valid valid 100 (ISB0b) 120 (ISB0c) 0 0 Standby Current(uA) 120 (ISB1) 10 (ISB0) 90 (ISB0a) Wait Time(us) 0 200 0
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FMP3217BAx
READ CYCLE (1)
Address
tAA tOH
CMOS LPRAM
(Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL)
tRC
Data Out
Previous Data Valid
Data Valid
READ CYCLE (2)
Address
(/ZZ=/WE=VIH)
tRC
tAA tCO
tOH
/CS
tHZ tBA
/UB, /LB /OE
tOLZ tBLZ tLZ
tBHZ tOE
tOHZ
Data Out
High-Z
Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us.
PAGE READ CYCLE
(/ZZ=/WE=VIH, 16 words access)
tMRC tRC tPC tPC tPC tPC tPC tPC tPC
A0~A3
tAA
A4~A20
tOH
tCO
/CS
tHZ
/UB, /LB /OE
tBLZ
tBA
tBHZ
tOE
tOLZ tPAA tPAA tPAA tPAA tPAA tPAA tPAA tOHZ Data Valid
Data Out
High-Z
tLZ Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us. 4. In case page address skew is over 3ns, tPAA will be out of spec.
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FMP3217BAx
WRITE CYCLE (1)
Address
tCW(2)
tWR(4)
CMOS LPRAM
tWC
(/WE controlled, /ZZ=VIH)
/CS
tAW tBW tWP(1)
/UB, /LB /WE
tAS(3)
tDW
tDH High-Z tOW
Data in Data Out
High-Z tWHZ
Data Valid
Data Undefined
WRITE CYCLE (2)
Address
(/CS controlled, /ZZ=/WE=VIH)
tWC
tAS(3)
tCW(2) tAW
tWR(4)
/CS /UB, /LB /WE
tDW tDH tBW tWP(1)
Data in Data Out
Data Valid
High-Z
High-Z
WRITE CYCLE (3)
Address
(/UB, /LB controlled, /ZZ=VIH)
tWC
tCW(2)
tWR(4)
/CS
tAW
/UB, /LB
tAS(3)
tBW tWP(1)
/WE
tDW tDH
Data in Data Out
Data Valid
High-Z
High-Z
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us.
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FMP3217BAx
PAGE WRITE CYCLE
(Address controlled, /ZZ=VIH)
tMRC tWC tPC tPC tPC tPC tPC tPC
CMOS LPRAM
tPC
A0~A3
A4~A20
/CS
/UB, /LB
tAS(3)
/WE
tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH
Data in
High-Z tWHZ
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
Data Valid
High-Z
tOW
Data Out
Data Undefined
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and /WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us. 6. In case page address is over 3ns, write to the invalid address can occur.
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FMP3217BAx
LOW POWER MODES 1. Mode Register Set
A20 ~ A5 A4 A3 A2 A1
CMOS LPRAM
A0
0
ZZ
Enable/Disable
Array On/Off on /ZZ
Half Selection
Array Refresh Area
/ZZ Enable/Disable A4 0 1 Type Deep Power Down Enable DPD Disable (Default)
Array On/Off on /ZZ A3 0 1 Type Partial Array Refresh Mode (Default) Reduced Memory Size Mode
Note: If the register is written to enable the Deep Power Down, the part will go into Deep Power Down during the following time that /ZZ is driven low and there is no MRS update. When /ZZ is driven high, all of the register settings will return to default state for the part (i.e. full array refresh, Deep Power Down Disabled).
Note: The RMS(Reduced Memory Size) mode is enabled after /ZZ goes high and remains enabled after /ZZ goes high. To change to a different mode, the mode register will have to be rewritten.
Half Selection (Top / Bottom) A2 0 1 Type Bottom (Default) Top
Array Refresh Area A1 0 0 1 1 A0 0 1 0 1 Type Full Array (Default) RFU 1/2 Array 1/4 Array
2. MRS Update
tWC
Address
tAS(3) tCW(2)
tWR(4)
/CS
tAW
/UB, /LB
tBW
tWP(1)
/WE
tZZWE
/ZZ
Register Write Start
Register Write Complete
Register Update Complete
The register update take place on the rising edge of /ZZ. Once the register is updated, the next time /ZZ goes low, without any updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a don't care When /ZZ is low during the register updates.
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FMP3217BAx
3. Deep Power Down Mode Entry/Exit
tWC
CMOS LPRAM
A4
tAS(3) tCW(2 ) tWR(4 )
/CS
tAW
/UB, /LB
tBW
tWP(1)
/WE
tZZWE tR tZZmin Next Cycle
/ZZ
Register Write(DPD)
Deep Power down start
Deep Power down exit
Parameter tZZWE tR(Deep Power Down Mode only) tZZmin
Description ZZ low to Write Enable Low Operation Recovery Time Low Power Mode Time
Min 0 200 10
Max 1 -
Units us us us
4. Address Information
Partial Array Refresh Mode (A3=0, A4=1) A2 0 0 X 1 1 A1,A0 11 10 00 11 10 Refresh Section 1/4 1/2 Full 1/4 1/2 Address 000000h-07FFFFh 000000h-0FFFFFh 000000h-1FFFFFh 180000h-1FFFFFh 100000h-1FFFFFh Size 512Kbx16 1Mbx16 2Mbx16 512Kbx16 1Mbx16 Density 8Mb 16Mb 32Mb 8Mb 16Mb
Reduced Memory Size Mode (A3=1, A4=1) A2 0 0 1 1 A1,A0 11 10 11 10 Refresh Section 1/4 1/2 1/4 1/2 Address 000000h-07FFFFh 000000h-0FFFFFh 180000h-1FFFFFh 100000h-1FFFFFh Size 512Kbx16 1Mbx16 512Kbx16 1Mbx16 Density 8Mb 16Mb 8Mb 16Mb
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FMP3217BAx
PACKAGE DIMENSION
48 BALL FINE PITCH BGA(0.75mm ball pitch)
Top View Bottom View B B B1
CMOS LPRAM
Unit : millimeters
A1 INDEX MARK
0.05 0.05
6 A B
5
4
3
2
1
#A1
C D C1 E C1/2 F G H B/2 Detail A 0.25/Typ. A Y Max 6.10 8.10 0.40 1.20 0.30 0.08 NOTES.
1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max)
Side View E2 D
E1
E
0.30
C
C
A B B1 C C1 D E E1 E2 Y
Min 5.90 7.90 0.30 0.20 -
Typ 0.75 6.00 3.75 8.00 5.25 0.35 1.10 0.85 0.25 -
12
0.85/Typ.
Revision 0.3 Feb. 2007
C

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